Field effect transistor and method of manufacturing the same

ABSTRACT

An FET includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group III-V compound semiconductor layer, formed on the first semiconductor layer are a gate electrode  36  and a source electrode  35 , formed on the second semiconductor layer is a drain electrode  37 , and the drain electrode and the gate electrode are formed respectively on opposing planes of a semiconductor structure which contains the first and second semiconductor layers. This arrangement enables a drain&#39;s breakdown voltage to be increased in the FET, because the gate electrode  36  and the drain electrode  37  are respectively disposed, in a spatial separation of each other, on different planes instead of the same plane of the semiconductor structure.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a field effect transistor which uses agallium nitride-based compound semiconductor, and a method ofmanufacturing the same.

2. Description of the Related Art

A gallium nitride-based compound semiconductor has a wider forbiddenband, so that a field effect transistor (FET) using such a semiconductorcan be operated at higher frequencies and at higher voltages. In view ofthe FET's applicability as a high-output power semiconductor device,there have been proposed a metal semiconductor FET (MESFET), a highelectron, mobility transistor (HEMT), and the like. A HEMT is ahigh-speed semiconductor device that is popularly used for operation athigher frequencies, and specifically, devices using a GaAs/AlGaAsheterojunction have been used for practical applications. Excellentmicrowave/millimeter wave characteristics of HEMTs have met widespreaduse for a low-noise, high-speed field effect transistor, e.g., for asatellite broadcasting receiver (refer to Japanese Patent ApplicationLaid-Open No. 2003-297856, No. 2000-174285 and No. 2004-319552, forexample).

In recent years, however, as the next-generation high-speed FET, moreinterests have been focused on a HEMT using a GaN-based compound(hereinafter referred to as a GaN-based HEMT) in place of a GaAs-basedcompound. Extensive researches have been repeated, because a GaN-basedcompound has a wide band gap and high saturated electron velocity whichis estimated from electron effective mass, also because the GaN-basedcompound ensures a possibility that a high frequency device is realizedfor operation at higher power outputs, at higher breakdown voltages, andat a higher temperature range. FIG. 7 illustrates an example of HEMTstructure using a GaN-based compound. The illustrated GaN-based HEMT700, in a sequential lamination from the bottom on an insulatingsapphire substrate 71, contains an AlN buffer layer 72, an undoped GaNlayer 73 as an electron transit layer, and an n-type AlGaN layer 74 as acarrier supply layer. Also, formed on the upper surface of n-type AlGaNlayer 74 are a source electrode 75, a gate electrode 76, and a drainelectrode 77. In a HEMT with this structure, the n-type AlGaN layer 74serving as a carrier supply layer supplies electrons to the undoped GaNlayer 73 serving as an electron transit layer, and thus such suppliedelectrons transit, with high mobility, through the region 73 a whichserves as a channel contacting the n-type AlGaN layer 74 at theuppermost portion of the GaN layer 73.

In order to achieve a high power output for the above-described HEMT,even a higher breakdown voltage must be so designed that a high voltagecan be applied. In operation, however, when a higher voltage is appliedbetween the source electrode 75 and the drain electrode 77, a portion ofthe device will be subjected to a large concentration of electric field,resulting in a device breakdown. In particular, a short circuit becomesproblematic, which results from a dielectric breakdown between gate anddrain electrodes. In a laterally structured device as illustrated inFIG. 7, where the source electrode 75, the gate electrode 76, and thedrain electrode 77 are formed on the same plane, it would be difficultto maintain insulation, above several hundred volts, between theseelectrodes. Even when a certain extent of insulation can be maintainedbetween the source and drain electrodes, application of a high voltageof as much as several thousand volts will cause a creeping discharge andthe like, and a dielectric breakdown will problematically occur due toair existing between the source and drain electrodes or due to a failureof breakdown voltage in the insulation layer which covers theseelectrodes. In addition, with the above-described arrangement which isso structured that electric field easily get concentrated directlybeneath the drain electrode, a dielectric breakdown is very likely tooccur because a high voltage will be applied by a concentration ofelectric field while in operation at a high voltage. Such a dielectricbreakdown has thus been hampering higher power outputs for HEMT devices.

The present invention has been made in order to solve theabove-described problems. A main object of this invention is to providea field effect transistor which realizes higher breakdown voltages toachieve higher power outputs, and to provide a method of manufacturingthe same.

To attain the above object, a field effect transistor (FET) according toa first aspect of the present invention includes a source electrode, agate electrode, a drain electrode and a semiconductor structure whichcontains a carrier transit layer. The semiconductor structure is made ofa Group III-V compound semiconductor layer; disposed on or above thesemiconductor structure are the gate electrode and the source electrode;and the drain electrode is disposed on opposing side of thesemiconductor structure where the gate electrode is disposed. Thisarrangement enables a drain's breakdown voltage, especially breakdownvoltage for the inter-electrode of drain-source or drain-gate to beincreased in the FET, because the gate and source electrodes and thedrain electrode are respectively disposed, in a spatial separation ofeach other, on different planes instead of the same plane of thesemiconductor structure. With this arrangement, the FET also can be of avertical FET semiconductor structure having a channel between the drainand source electrodes.

Also, in the field effect transistor according to a second aspect of thepresent invention, the semiconductor structure contains a firstsemiconductor layer and a second semiconductor layer which has a bandgap energy greater than that of the first semiconductor layer; the gateelectrode and the source electrode are disposed respectively on thefirst semiconductor layer side of the semiconductor structure; and thedrain electrode is disposed on the second semiconductor layer side ofthe semiconductor structure. This arrangement enables a carrier totransit at higher mobility in a channel.

Furthermore, the field effect transistor (FET) according to a thirdaspect of the present invention includes a source electrode, a gateelectrode, a drain electrode and a semiconductor structure whichcontains a first semiconductor layer and a second semiconductor layerhaving a band gap energy greater than that of the first semiconductorlayer. The first and second semiconductor layers are made of a galliumnitride-based compound semiconductor layer; disposed on the firstsemiconductor layer side of the semiconductor structure are the gateelectrode and the source electrode; disposed on the second semiconductorlayer side is the drain electrode and the drain electrode is disposed onopposing side of the semiconductor structure where the source electrodeis disposed. This arrangement enables an FET's breakdown voltage to beincreased, because the source and drain electrodes are respectivelydisposed, such as the invention according to the above-described firstand second aspect, on the opposing planes. With this arrangement, thesource and gate electrodes are disposed on the first semiconductorlayer, and the drain electrode is disposed on the second semiconductorlayer, so that a concentration of electric field can be mitigatedbetween the drain and gate electrodes.

Furthermore, in the field effect transistor according to a fourth aspectof the present invention, the second semiconductor layer has an AlGaNlayer.

Furthermore, in the field effect transistor according to a fifth aspectof the present invention, the second semiconductor layer has an undopedAlGaN layer and a Si-doped AlGaN layer. With this construction, acarrier scattering can be reduced at the interface of the first andsecond semiconductor layers.

Furthermore, in the field effect transistor according to a sixth aspectof the present invention, the carrier transit layer contained in thesemiconductor structure has an end surface exposed on a side where thesource electrode is disposed, and the source electrode is disposed tomake an ohmic contact with the end surface. With this arrangement, evenwhen the second semiconductor layer is an i-type GaN layer and the like,an electric current can be extracted to realize a field effecttransistor with a high breakdown voltage.

Furthermore, in the field effect transistor according to a seventhaspect of the present invention, there is an intermediate layer disposedbetween the second semiconductor layer and the drain electrode. Withthis arrangement, the drain electrode and the second semiconductor layercan be spaced apart, so that a concentration of electric field can bemitigated by an increased distance between the drain and gateelectrodes, resulting in an even higher breakdown voltage of the fieldeffect transistor.

Furthermore, in the field effect transistor according to a eighth aspectof the present invention, the intermediate layer is made of GaN. Withthis construction, it is possible to prevent an extreme concentration ofelectric field into the gate electrode terminal, reducing an effect ofsurface level, so that the field effect transistor can be stablyoperated.

Furthermore, in the field effect transistor according to a ninth aspectof the present invention, the first semiconductor layer is a carriertransit layer, and the second semiconductor layer is a carrier supplylayer.

Furthermore, in the field effect transistor according to an tenth aspectof the present invention, the field effect transistor is a high electronmobility transistor (HEMT).

Furthermore, in the field effect transistor according to a eleventhaspect of the present invention, the gate electrode is annularlydisposed so as to surround an area where the source electrode isdisposed, while the drain electrode is, further, annularly disposed soas to surround an area on opposing side of the semiconductor structurewhere the gate electrode is disposed. With this arrangement, the gateelectrode is disposed between the drain and source electrodes, and thegate and drain electrodes are annularly disposed to prevent aconcentration of electric current, resulting in realization of a highbreakdown voltage.

Furthermore, in the field effect transistor according to a twelfthaspect of the present invention, the gate electrode being annularlydisposed so as to surround an area on opposing side of the semiconductorstructure where the drain electrode is disposed, while the sourceelectrode is, further, annularly disposed so as to surround an areawhere the gate electrode is disposed. With this arrangement, the gateelectrode is disposed between the drain and source electrodes, and thegate and drain electrodes are annularly disposed to prevent aconcentration of electric current, resulting in realization of a highbreakdown voltage.

Furthermore, a method of manufacturing a field effect transistoraccording to a thirteenth aspect of the present invention is infabrication of a field effect transistor provided with a carrier transitlayer and a carrier supply layer, the carrier supply layer being formedon or above the carrier transit layer and having a band gap energygreater than that of the carrier transit layer. The method includes astep of sequentially laminating at least the carrier transit layer andthe carrier supply layer upon a substrate so that a semiconductorstructure is formed; a step of forming a drain electrode on one side ofthe carrier supply and transit layers of the semiconductor structure; astep of forming a gate electrode and a source electrode on opposing sideof the semiconductor structure where the drain electrode is formed; anda step of securing a side of the semiconductor structure where the drainelectrode is formed or where the gate and source electrodes are formedto a support substrate and then removing the previously statedsubstrate. With this method, the gate and source electrodes and thedrain electrode are respectively disposed on different surfaces insteadof the same surface of the semiconductor structure, so that a fieldeffect transistor is obtained which has high breakdown voltages betweenthe gate and drain electrodes and between the source and drainelectrodes.

Furthermore, in a method of manufacturing a field effect transistoraccording to a fourteenth aspect of the present invention, the drainelectrode is disposed between the semiconductor structure and thesupport substrate. With this arrangement, a highly reliable insulationstructure can be obtained because a portion between the source and gateelectrodes is disposed on a side of the semiconductor structure,opposite the support substrate.

Furthermore, in a method of manufacturing a field effect transistoraccording to a fifteenth aspect of the present invention, the supportsubstrate is a conductive substrate and secures to the semiconductorstructure through a conductive material; and the drain electrode iselectrically connected to the support substrate and also has an externalconnection on opposing side of the support substrate where thesemiconductor structure is disposed. With this arrangement, a verticalFET structure wherein the support substrate is an extraction electrodeof the drain electrode can be obtained.

Furthermore, in a method of manufacturing a field effect transistoraccording to a sixteenth aspect of the present invention, in the step offorming the semiconductor structure, an intermediate layer is laminatedon or above the carrier supply layer, and the drain electrode isdisposed on or above the intermediate layer, with the intermediate layerbeing partially disposed on or above the carrier supply layer.

According to a field effect transistor and a method of manufacturing thesame in accordance with the present invention, high insulationproperties can be attained by an arrangement where the gate electrode,the source electrode, and the drain electrode are spaced apart of eachother, so that an increased breakdown voltage between these electrodesmakes it possible to obtain a highly reliable field effect transistorwhich can be operated at a high power output. An increased breakdownvoltage for the drain electrode, in particular, can improve a breakdownvoltage of the field effect transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating an exemplaryfield effect transistor according to an embodiment (embodiment 1) of thepresent invention;

FIG. 2 is a graph illustrating how the flow of a drain current I_(D)with respect to an inter-electrode (drain-source) voltage V_(DS) iscontrolled by an applied gate voltage V_(G);

FIG. 3 is a schematic cross-sectional view illustrating an exemplaryfield effect transistor according to another embodiment (embodiment 2)of the present invention;

FIG. 4 is a schematic cross-sectional view illustrating an exemplaryfield effect transistor according to yet another embodiment (embodiment3) of the present invention;

FIG. 5 is a schematic plan view illustrating the field effect transistorshown in FIG. 4;

FIG. 6 is a schematic cross-sectional view illustrating an exemplaryfield effect transistor according to an alternative embodiment(embodiment 4) of the present invention;

FIG. 7 is a schematic cross-sectional view illustrating an example of aconventional HEMT structure using a GaN-based compound;

FIGS. 8A-8C are schematic cross-sectional views illustrating steps ofmanufacturing the field effect transistor shown in FIG. 3; and

FIG. 9 is a schematic cross-sectional view illustrating a field effecttransistor according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

It should be noted that the formation on a semiconductor layer, astermed in the present disclosure, refers either to direct formation inclose contact with that particular layer, or to an arrangement offorming with one or more intermediate layers or even through otherintermediate materials. In addition, the term of a formation surface maybe used, without being limited to the same and identical plane as theprincipal plane, to include the case of forming on other surfaces suchas an end surface orthogonal to the principal plane.

Embodiment 1

FIG. 1 illustrates an example that constitutes a GaN-based HEMT 100 as afield effect transistor according to the embodiment 1 of the presentinvention. The illustrated HEMT 100 has a semiconductor structure 12 ina sequential lamination of a carrier transit layer 13 as a firstsemiconductor layer, and a carrier supply layer 14 as a secondsemiconductor layer. Also, there are formed a drain electrode 17 on anupper surface of the carrier supply layer 14, and a gate electrode 16 onan lower surface of the carrier transit layer 13, respectively. On theother hand, there is a source electrode 15 formed on an end surface ofthe carrier transit layer 13, i.e., on a surface which is substantiallyperpendicular to the surface where the carrier transit layer 13 is incontact with the carrier supply layer 14, the surface being a right endsurface of the GaN layer when viewed in FIG. 1. These source and drainelectrodes 15 and 17 are disposed in an ohmic contact with thesemiconductor structure 12 which contains the first and secondsemiconductor layers, while the gate electrode 16 is in a Schottkycontact. In the GaN-based HEMT 100 with this structure, the carriersupply layer 14 supplies electrons, as a carrier, to the carrier transitlayer 13, and such supplied electrons form a 2-dimensional electron gas(2DEG) layer, on an upper portion of the carrier transit layer 13, atthe interface with the carrier supply layer 14, with the 2DEG layerbeing used as a channel 13 a for the electrons to transit through withhigh mobility. In this way, when the carrier is mainly an electron, thecarrier transit layer 13 will serve as an electron transit layer. A sizeof the channel 13 a is controlled by a depletion layer which is formedby a gate voltage V_(G) being applied on the gate electrode 16. A sizeof the depletion layer is controlled by a reverse voltage being appliedon the gate electrode 16, which performs a control of the drain currentI_(D), i.e., ON/OFF switching of the HEMT.

(Carrier Transit Layer 13, Carrier Supply Layer 14)

The first and second semiconductor layers respectively are anitride-based semiconductor layer, and preferably use anAl_(x)In_(y)Ga_(1-x-y)N (0≦x, 0≦y, x+y≦1). In particular, with thesecond semiconductor layer having a band gap energy greater than that ofthe first semiconductor layer, the second semiconductor layer canfunction as a carrier supply layer and the first semiconductor layer canfunction as a carrier transit layer, respectively. The carrier supplylayer 14 supplies a carrier to the carrier transit layer 13. The carriersupply layer 14 is preferably an n-type nitride semiconductor layer. Thecarrier supply layer 14 is doped with a dopant in order to increase acarrier density, and it is preferred that Si being an n-type impurity asa dopant be contained by the order of 1×10¹⁸ to 1×10²⁰ per cubic cm,resulting in an increased carrier density. When Si is larger than 1×10²⁰per cubic cm, a crystallinity of the second semiconductor layer willbecome poor. Also, the carrier supply layer can have a reduced gateleakage current and a resultantly increased a breakdown voltage byreducing the amount of dopant or by forming with undoped. In the exampleshown in FIG. 1, an n-type AlGaN layer is employed for the carriersupply layer 14, and an undoped GaN layer is employed for the carriertransit layer 13. An i-type AlGaN layer for the carrier supply layer canalso contribute to higher breakdown voltages. The carrier transit layer,on the other hand, may be doped with a suitable dopant to reduce acarrier transition in the carrier transit layer other than the channel.In the case where the carrier transit layer is doped with an n-typeimpurity, an n⁻-type is preferred because n-type or n⁺-type may cause anunintended electric current to flow at the time of switching off, whichresults from formation of a capacitance. Thus, OFF-state characteristicscan be controlled by means of a carrier density in the carrier transitlayer. Also, in the case of a normally-OFF type, it is preferable thatthe carrier transit layer be an i-layer, e.g., an undoped layer. On theother hand, the nitride semiconductor layer tends to be an n-type due toa nitrogen vacancy occurring at the time of formation and can thereforebe doped with a p-type impurity to the extent of compensating thevacancy. As for a film thickness for the first and second semiconductorlayers, without being specifically limited, it is preferred that thefirst semiconductor layer be preferably between 1 μm and 5 μm, morepreferably between 2 μm and 3 μm, and that the second semiconductorlayer be preferably between 5 nm and 500 nm, more preferably between 5nm and 50 nm, so that the carrier transits with high mobility in adevice which has carrier supply and transit layers. It is furtherpreferred for a practical application that a distance from a gateelectrode formation surface of the first semiconductor layer to theinterface between the first and second semiconductors be set to bebetween 5 nm and 500 nm, more preferably between 5 nm and 50 nm in orderto obtain a remarkable control effect of the depletion layer by the gateelectrode for controlling the current flow.

(Electrode)

Of each electrode to be formed on a top surface of the carrier supplylayer 14, both the source electrode 15 and the drain electrode 17 areohmic electrodes, and the gate electrode 16 is a Schottky electrode.These electrodes can have a contact layer (not shown) interposedrespectively in order to obtain ohmic and Schottky characteristics. Forexample, the source electrode 15 and the drain electrode 17 constitutean ohmic electrode at the interface with the ohmic contact layer formedon the carrier supply layer 14, while the gate electrode 16 has Schottkyjunction characteristics at the interface contacting with the Schottkycontact layer formed on the carrier supply layer 14.

In a field effect transistor, an electron serving as a carrier isemitted from a donor in the carrier supply layer 14, but this carrierelectron, instead of staying put in the carrier supply layer 14, ispulled into the channel 13 a having a greater affinity, and is stored inthe vicinity of the interface. Since such a stored electron is notsubjected to scattering by the dopant, the electron can transit throughthe channel 13 a with high mobility. On the other hand, when adrain-source voltage V_(DS) is applied between the source electrode 15and the drain electrode 17, as shown in FIG. 1, a drain current I_(D)flows through the channel 13 a, between the source electrode 15 and thedrain electrode 17. Also, when a gate voltage V_(G) is applied on thegate electrode 16, a depletion layer corresponding to that voltageoccurs and extends under the gate electrode 6, so that the drain currentI_(D) can be controlled by the gate voltage V_(G) as shown in FIG. 2.Also, the Schottky contact layer directly beneath the gate electrode 16serves as a barrier layer for suppressing an electric current (gateleakage current) which flows between the gate electrode 16 and thechannel 13 a, while the ohmic contact layer has an effect of reducing acontact resistance as ohmic electrodes of the source electrode 15 andthe drain electrode 17.

(Gate Electrode 16)

The gate electrode 16 is formed on the side of the carrier transit layer13 instead of the side of the carrier supply layer 14. Such formationcauses the gate electrode 16 to be formed on a surface different fromthe drain electrode 17, i.e., on an opposing surface, in a spatialseparation of each other. In this way, by spacing the gate electrode 16and the drain electrode 17 apart of each other on opposite surfaces ofthe semiconductor structure 12 instead of forming on the same surface,insulation is facilitated between the two electrodes.

When a voltage is provided to a HEMT having an electrode structure asshown in FIG. 7, a higher electric field will be applied on the drainend of the gate electrode 76 than on other portions. When a localintensity of electric field exceeds a certain value after a high voltageis provided to a field effect transistor device, there occurs anaforesaid device breakdown in that location, and it is important toavoid a concentration of electric field for purposes of an increasedbreakdown voltage of a device. In the present embodiment, the drainelectrode is formed on a surface opposite the gate electrode so as toincrease a distance of spatial separation between the drain electrodeand the gate electrode. This arrangement mitigates the concentration ofelectric field working between the gate and drain electrodes,contributing to higher breakdown voltages for an electric fieldtransistor device. Also, the drain electrode is formed at a locationwhere this electrode is shifted away from the source electrode, e.g.,where the drain electrode and the gate electrode are opposing separatelyof each other as shown in FIG. 1, rather than at a location opposite thegate electrode, e.g., where the drain electrode and the gate electrodeare aligned to each other. This arrangement elongates a distance betweenthe gate and drain electrodes for an increased breakdown voltage, aswell as being able to effectively perform an gate electrode's originalfunction of controlling the depletion layer, through placing the gateelectrode between the drain and source electrodes.

(Source Electrode 15)

In the arrangement shown in FIG. 1, the gate electrode 16 is formed on asurface opposite the surface where the drain electrode 17 is formed, andalso the source electrode 15 is formed on the side of the gate electrode16, i.e., on a surface opposite the surface where the drain electrode 17is formed. It goes without saying that this arrangement can avoid aproblem of discharge resulting from the above-said insufficientinsulation structure due to the drain and source electrodes being on thesame surface, and also the inter-electrode (drain-source) breakdownvoltage V_(DSS) of a field effect transistor can be increased.

Embodiment 2

Also, FIG. 3 shows a cross-sectional view of the field effect transistoraccording to the embodiment 2 of the present invention. The illustratedfield effect transistor is also a HEMT, where a GaN layer is formed asthe intermediate layer 38 between the carrier supply layer 34 and thedrain electrode 37.

In the case where an intermediate layer is provided between a carriersupply layer and a drain electrode, a film thickness between 1000 Åand 1μm for the intermediate layer can mitigate a concentration of electricfield through increasing the distance between the drain electrode andthe gate electrode. This intermediate layer is preferably an n-type GaNlayer, and particularly functions in a preferred manner as anintermediate layer through making it a layer doped with Si of less than5×10¹⁹ per cubic cm.

(Drain Electrode 37)

The wider the drain electrode 36 is spaced apart from the gate electrode36 and the source electrode 35, the higher the breakdown voltage can be.For this purpose, in the arrangement according to the embodiment 2,through interposing the intermediate layer 38 between the carrier supplylayer 34 and the drain electrode 37 as shown in FIG. 3, the drainelectrode 37 and the gate electrode 36 can be spaced more apart fromeach other to mitigate a possible concentration of electric fieldoccurring between them when a high voltage is applied, so that a higherbreakdown voltage can be realized for a HEMT device. An n-type layer,e.g., an n-type GaN layer, can be employed for the intermediate layer,but without being limited to it.

(Gate Electrode 36)

The gate electrode is placed relatively closer to the channel 33 a inorder to ensure the control effect of the depletion layer by the gateelectrode. In the case of FIG. 1, the gate electrode 16 is formed on thesurface of GaN layer, but preferably as shown in FIG. 3, the location offorming the gate electrode 36 on the back surface of the carrier transitlayer 33 is made closer to the channel 33 a through making the carriertransit layer thinner by etching, etc. For example, when the carriertransit layer 33 is an undoped GaN layer, the distance is set to be onthe order of 1000 Å between the gate electrode formation surface and thechannel 33 a.

(Source Electrode 35)

The source electrode 35 must cover at least a portion of end surface ofthe carrier transit layer 33. However, an increased area of the sourceelectrode 35 can also facilitate interconnection for the electrodes andextraction of an electric current. For example, as shown in FIG. 3, thesource electrode 35 can also be extended so as to continue from the endsurface to the bottom surface of the carrier transit layer 33, or tocontinue to the bottom surface of the carrier supply layer 34. In thisway, by providing an electrode portion extended below the carriertransit and supply layers, that electrode portion can serve as a padportion. This assists in wiring out of the same surface as the gateelectrode 36, and a simultaneous interconnection can be made to the gateelectrode 36 and the source electrode 35, with a wiring work beingfacilitated that much.

Furthermore, when an n-type GaN layer or an AlGaN layer is employed fora carrier transit layer, the source electrode can be formed also on thesurface side instead of the end surface of the carrier transit layer.When an i-type GaN layer is employed for the carrier transit layer, thesource electrode formed on the surface does not allow an electriccurrent to flow because of a high resistance. When an n-type GaN layeror an AlGaN layer is used, however, the above-described arrangement canbe employed.

(Carrier Supply Layer 34)

Furthermore, in the case shown in FIG. 3, the carrier supply layer 34 ismade of an n-type AlGaN layer 34A and an undoped AlGaN layer 34B. Bysetting the interface with the carrier transit layer 33 so as to be theundoped AlGaN layer 34B, it is possible to avoid reduced mobility of thecarrier which is scattered by impurities in the AlGaN layer at theinterface, or in the vicinity of the channel 33 a, so that high carriermobility can be realized. Also by means of modulation dope and the like,a similar effect can be obtained through reducing a doping amount in thecarrier supply layer in the vicinity of the interface. In the case wherethe carrier supply layer is divided into a plurality of layers asdescribed above, or when a doping amount is varied, it is believed thatthe undoped layer or less doped layer supply a little carrier or doesnot supply. In this sense, it may be understood that such a layer is notperforming its own function as a carrier supply layer. In thisdisclosure, however, it should be noted that such a layer is alsoincluded in the carrier supply layer, for necessity of distinguishing alayer rather than a function.

Embodiment 3

Also, as shown in the cross-sectional view of FIG. 4 and in the planview of FIG. 5, a HEMT device can be formed in a circular shape using anannular electrode. In the case where a rectangular electrode isemployed, a breakdown voltage tended to be poor because a portion suchas a corner of electrode is formed with an electric field being easilyconcentrated. Therefore, annular or circular formation of electrodewithout such a portion can avoid a local concentration of voltage andcurrent, help improve a breakdown voltage as compared to an arrangementwith a rectangular electrode, and achieve an added reliability andstability. In the example of FIG. 5, the source electrode 45 iscircularly formed on the back surface of the undoped GaN layer, aroundwhich the gate electrode 46 is annularly formed with the sourceelectrode 45 in the center. In addition, a drain electrode 47 isannularly formed, on the n-type AlGaN layer, in a concentric, circularmanner so that the gate electrode 46 on the back surface of thesemiconductor structure is surrounded. With this arrangement, anyportion between the drain electrode 47 and the source electrode 45 ismaintained at a substantially constant distance for formation of thegate electrode 46, so that a switching control can be performed with thegate voltage V_(G). This arrangement further enables a concentration ofinter-electrode electric field to be mitigated and a HEMT device to berealized with a high breakdown voltage.

Embodiment 4

In a field effect transistor, switching is enabled by controlling adepletion layer through disposing a gate electrode substantially in aneven manner between a drain electrode and a source electrode. Therefore,a replaced arrangement of the drain electrode 67 and the sourceelectrode 65, as shown in FIG. 6, as the embodiment 4 can also beemployed, without being limited to the above-described arrangement. Alsoin the arrangement in FIG. 6, like in FIG. 5, with the drain electrode67 in the center, the gate electrode 66 is annularly arranged inside theannular source electrode 65, maintaining a substantially constantdistance between the drain electrode 67 and the source electrode 65.This arrangement enables a field effect transistor with a high breakdownvoltage to be obtained, which avoids a concentration of electric field,like in FIG. 4.

(Field Effect Transistor)

In each embodiment, a HEMT device with electrodes being formed onopposite sides of the semiconductor structure can be fabricated througha bonding structure where the semicondutor structure is bonded on asupport substrate and then a growth substrate is removed. However, it isalso possible to fabricate the device by epitaxially growing thesemiconductor structure on a conductive substrate such as a GaNsubstrate, etc. and then forming electrodes on opposite sides of thesemiconductor structure containing the GaN substrate, that is, on thesurface of semiconductor structure serving as a growth surface and onthe back surface of the opposing GaN substrate.

A GaN-based HEMT is made of a gallium nitride-based compoundsemiconductor. The gallium nitride-based compound semiconductor layerhas a buffer layer formed on a substrate as may be necessary, andfurther have the carrier transit layer 33 and the carrier supply layer34 epitaxially grown in a sequential manner, and still further haveelectrodes laminated. As for a method of crystal growth, a process bysuch as metal-organic chemical vapor deposition (MOCVD), hydride vaporphase epitaxy (HVPE), and molecular-beam epitaxy (MBE) can be employed.A gallium nitride-based compound semiconductor is expressed in thegeneral formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x, 0≦y, x+y≦1), and B, P,or As may be mixed in the crystal. Also in the present disclosure, eachsemiconductor layer, and carrier supply and transit layers are notspecifically limited to being of a single layer or a multilayer. Inaddition, an n-type impurity or a p-type impurity may be suitablycontained in the nitride semiconductor layer. For an n-type impurity,Group IV or VI elements such as Si, Ge, Sn, S, O, Ti, Zr, etc. can beused, preferably Si, Ge, and Sn being used, and most preferably Si beingused. For a p-type impurity, on the other hand, without beingspecifically limited, Be, Zn, Mn, Cr, Mg, Ca, etc. can be named,preferably Mg being used. This selection enables a nitride semiconductorof each conduction type to be formed. Further, for a growth substratewhich forms a semiconductor structure, an insulating sapphire substrate,a conductive GaN substrate, etc. can be employed. For a supportsubstrate, a conductive substrate such as a SiC substrate and Cu—Wsubstrate having a higher thermal conductivity and excellent heatdissipation can be employed.

In each embodiment, a unipolar device that uses electrons as thecarriers will be explained. However, in a case where using holesprepared by making the conductivity type of the carriers opposite, thedevice can be made a transistor using the holes.

(Semiconductor Structure, Device Structure)

The semiconductor structure comprises at least the carrier transit layeror a semiconductor layer served as the channel, and this layer can beinterposed between the source and drain electrodes. Additionally, thesemiconductor structure comprises the carrier supply layer adjacent tothe carrier transit layer. It can provide a structure that the sourceand drain electrodes are provided to interpose the carrier supply layerin between, and one of the electrodes is provided on a side of thecarrier transit layer of the semiconductor structure. Such as eachembodiment, when the drain electrode is formed on a side of the carriersupply layer of the semiconductor structure, on the side of the carriertransit layer or the underlying layer of the semiconductor structure,i-type layer of insulating or semi-insulating can be formed into arelatively thick layer. It would be facilitated that the gate electrodeis provided on a side of the source electrode in the semiconductorstructure. Consequently, breakdown voltage in the FET can be increasedbecause of higher insulation properties and mitigation of theconcentration of electric field between the gate and drain electrodes.On the other hand, when the gate electrode is provided on the side ofthe carrier supply layer, the gate electrode structure can be preferablyformed because it is not necessary to fabricate a recess structure tothe thick i-type layer on the side of the carrier transit layer.

FIG. 9 shows a schematic cross-sectional view of an FET. As shown inFIG. 9, in between the source or drain electrode and the carrier supplylayer, it can be employed that these electrodes is directly formed onthe carrier supply layer such as each embodiment, an intermediate layeris interposed therebetween, and carrier transit layer or its end portionexposed are provided for contact with these electrodes. As describedabove, in case that the carrier transit layer provides for a baseportion or the side of the carrier supply layer provides for processing,as for processing the carrier transit layer and forming the electrode onan end surface thereof, it is preferable that the electrode on the sideof the carrier supply layer provides for the electrode to be formed onthe end portion of the carrier transit layer. Consequently, as shown inFIG. 9, on the side of the carrier supply layer, the electrode to beformed on the end surface is formed on an insulating film 84 and an endsurface of the semiconductor structure where a semiconductor structure86 is exposed by removal.

In each embodiment, while the electrode of the carrier supply layer sideand the electrode of the carrier transit layer side are disposed so asto oppose each other with the semiconductor structure 86 in between,because it suffices that on each electrode there are provided the drainelectrode and the gate and source electrodes, as the drain electrodethere may also be used the electrode of the carrier transit layer side.

(Source, Gate, Drain Electrode)

Electrodes such as the source electrode 35, gate electrode 36, and drainelectrode 37 are typically formed with a composition different fromsemiconductor materials constituting the device. The electrode is madeof a highly conductive material such as Ti, Al, Cu, W, Au, Ag, Mo, Ni,Pt, In, Rh, Ir, Cr, etc. Conductive oxides and conductive plastics withconductivity can also be used, without being limited to metal materials.Furthermore, the electrodes can be made of a single-elemental materialas well as a multi-elemental material such as an alloyed material, aeutectic material, and a mixed crystal. For example, ITO, etc. can beused. A layer structure with more than one layer can also be employed.As an example of an ohmic electrode for an AlGaN-based or GaN-basedsemiconductor layer, a Ti/Al-based electrode is preferably employed,while, as an example of a Schottky electrode, an electrode including aNi/Au-based material is preferably employed. Resultantly, the ohmiccharacteristics, the Schottky characteristics, etc. will functionsatisfactorily as required of an electrode for a HEMT. For example, inorder to obtain an ohmic contact for the source electrode 35 and thedrain electrode 37, Ti/Pt-, Ti/Au-, TiAl-, and V/Al-based metals areused, which are subjected to quick annealing at a temperature range offrom 800° C. to 950° C. Also, for the gate electrode 36, W/Au, Ni/Au, orAu, Cu, Ni, etc. are used. The cross-sectional shape of the gateelectrode is not specifically limited to a T-shape, an I-shape, etc.,but a gate electrode with a T-shaped cross section will increase across-sectional area for the electrode and reduce an electroderesistance, so that characteristics of an operating frequency at higherfrequencies can be improved. Also, in view of adherence, etc. betweenthe ohmic electrode and a wire, a pad electrode may be formed on thesurface in contact with the semiconductor layer. On the pad electrode isformed a metallized layer (bump) for contacting an external electrode,etc. The metallized layer consists of materials such as Ag, Au, Sn, In,Bi, Cu, Zn, etc. The electrode formation surface side of a field effecttransistor is set opposite each external electrode which is provided ona sub-mount, with corresponding electrodes being joined together at thebump. Furthermore, a wire interconnection, etc. is performed upon thesub-mount. It is noted in the present disclosure that the Ti/Al, forexample, refers to a sequential lamination of Ti and Al as viewed fromthe semiconductor side.

The substrate and the buffer layer are preferably removed. Existence ofthe buffer layer generates a leakage current, causing a leakage path tobe formed, and so removal of the substrate as well as the buffer layer,for example, removal of the buffer layer by polishing a part of thesemiconductor structure after removal of the substrate, can prevent sucha disadvantage. Also, a buffer layer, a underlying layer, etc. at theirinitial growth stage tend to be poor in crystallinity, such a portionbecoming a leakage path. It is preferable to form the carrier supply andtransit layers and the first and second semiconductor layers after theportion of a leakage path is removed at a depth of a poor crystallinity.When the substrate is removed all, it is easier to remove the bufferlayer. At this stage, a film thickness of the carrier transit layer maybe adjusted to obtain desired characteristics instead of theabove-mentioned partially thinning the portion of gate electrodeformation.

(Method of Manufacturing Field Effect Transistor)

With reference to FIGS. 8A-8C as an exemplary method of manufacturingthe field effect transistor according to the present embodiment, themethod of manufacturing a HEMT shown in FIG. 3 will now be described ina sequential manner. FIGS. 8A-8C are schematic cross-sectional viewsintended to explain processes of manufacturing the field effecttransistor shown in FIG. 3. Here, a GaN-based HEMT is fabricated on asapphire substrate by means of MOCVD. First, a sapphire substrate as agrowth substrate 81 is loaded into an MOCVD reactor, and a surface ofC-plane sapphire substrate is allowed to reach substrate temperature of1050° C. in a hydrogen atmosphere, with the hydrogen being allowed toflow for cleaning the substrate. Next, the substrate temperature islowered down to 510° C., and hydrogen as a carrier gas, and bothtrimethyl gallium (TMG) and ammonium gasses as a source gas are used togrow a GaN of buffer layer 82 in a film thickness of about 200 Å on thesubstrate. Subsequently, after the growth of the buffer layer, the TMGgas alone is turned off and the substrate temperature is raised up to1050° C. When the substrate temperature reaches 1050° C., TMG andammonium gasses are again used, as a source gas, to grow an undoped GaNlayer in a film thickness of 3 μm. This undoped GaN layer will serve asa carrier transit layer 33. It should be noted in the present disclosurethat the “undope(d)” refers to being intentionally undoped, for example,with an impurity density being less than 1×10¹⁷ per cubic cm, or withoutcontaining its dopant.

Next, at substrate temperature of 1050° C., TMG, trimethyl aluminum(TMA), and ammonium gasses, as a source gas, are used to grow theundoped AlGaN layer 34A in a film thickness of 50 Å, the layerconsisting of Al_(0.2)Ga_(0.8)N with a molar fraction of Al being 0.2 inthe mixed crystal. Subsequently, at substrate temperature of 1050° C.,TMG, TMA, and ammonium gasses, as a source gas, and silane gas, as animpurity gas, are used to grow the n-type AlGaN layer 34B, doped with Siof 2×10¹⁸ per cubic cm, in a film thickness of about 100 Å, the layerconsisting of Al_(0.2)Ga_(0.8)N with a molar fraction of Al being 0.2 inthe mixed crystal. It can be considered that the undoped AlGaN layer 34Band n-type AlGaN layer 34A, in particular the Si-doped n-type AlGaNlayer performs the function of supplying a carrier. Also, upon theSi-doped n-type AlGaN layer 34A is grown an n-type GaN layer in a filmthickness of 3000 Å as an intermediate layer 38, the layer being dopedwith Si of 1×10¹⁹ per cubic cm. After the completion of the reaction,the temperature is lowered down to room temperature, and the wafer istaken out of the reactor.

(Semiconductor Device Structure Processing Step, Drain Electrode FormingStep)

First, a spin coater is used to coat a resist for insulation of aportion other than a device forming area, and then a pattern is exposedfor patterning the resist. Etching is performed by Cl₂ gas with ICPetching apparatus in order to etch the AlGaN and GaN layers for deviceisolation with plasma RIE apparatus. Here, in order to form a drainelectrode 37 on the GaN layer, the GaN layer is removed in advance byetching, except for an area for the drain electrode 37 to be formed.Then, a magnetron sputtering apparatus is used to sputter Ti in a filmthickness of 100 Å, and Al in 3000 Å with RF power of 500W; a Ti/Aldrain electrode 37 is formed after lifting off. Subsequently, theelectrode is subjected to annealing in a nitrogen gas atmosphere at 600°C. for 10 minutes, resulting in formation of the drain electrode 37 witha film thickness of about 300 nm.

(Support Substrate Bonding Step)

Next, as shown in FIG. 8A, the insulation protective film 84 is formedon a portion of semiconductor structure surface and drain electrode 37.Then, sequentially, the conductive bonding layer 85A on the side of thesemiconductor structure is formed substantially all over the area ofsemiconductor structure surface, while forming the conductive bondinglayer 85B on the side of bonding support substrate 83. As the insulationprotective film 84, a SiN/SiO₂ film is now formed in a thickness of1000/20000 Å, and Ti/Pt/Au/Sn/Au as the bonding layer 85A is sputteredfor film formation, and also Ti/Pt/Au as the bonding layer 85B issputtered on a Cu—W substrate of the support substrate 83 for filmformation. Subsequently, the bonding layer 85 is bonded bythermocompression bonding as shown in FIG. 8A.

(Growth Substrate Removing Step, Semiconductor Device StructureProcessing Step, Source and Gate Electrodes Forming Step)

Next, in order to form the carrier transit layer 33 of undoped GaN, thesapphire substrate 81 is removed by means of laser lifting-off, andbuffer layer 82 and a portion of underlying layer is polished forremoval. For the removal, the undoped GaN layer is polished on its backsurface to the order of 1 μm in film thickness. Further, as shown inFIG. 8C, etching is respectively performed in areas for the gateelectrode 36 and source electrode 35 to be formed on the undoped GaNlayer. The area for formation of a gate electrode is thus groovilyremoved to obtain a concaved shape, with the film thickness of theundoped GaN layer 33 being on the order of 1000 Å at the concavedbottom. Also, the area for formation of a source electrode is the areaincluding the end surface of the undoped GaN layer 33, so that theundoped GaN layer which is a partial area of the semiconductor structureis removed at a depth where the undoped AlGaN layer 34B is exposed.Subsequently, the gate electrode 36 and the source electrode 35 areformed. For the source electrode 35, like for the drain electrode 37,the magnetron sputtering apparatus is also used to sputter Ti in a filmthickness of 100 Å, and Al in a film thickness of 3000 Å with RF powerof 500W; a Ti/Al source electrode 35 with a film thickness of about 300nm is formed after lifting off. For the gate electrode 36, on the otherhand, there is formed a Ni/Au Schottky electrode, as an electrode with afilm thickness of about 300 nm, at the bottom of the concaved portion inthe undoped GaN layer 33.

In this way, after the source and gate electrodes are respectivelyformed on the opposing sides of the support substrate of semiconductorstructure, a pad electrode is formed which is provided for externalconnection on the gate electrode 36 and the source gate 35 respectively.Now for the pad electrode, Ni and Au are sputtered and lifting-off isperformed to form a Ni/Au pad electrode. Finally, for insulation in eachelectrode and between its external connections, an insulation protectivefilm of SiN/SiO₂ with a thickness of 1000/20000 Å is formedsubstantially all over the semiconductor structure and the devicestructure on the side of the source and gate electrodes, and theinsulation film is removed in a partial area of each pad electrode, sothat the external connection is exposed.

In this example, when viewed in a cross-sectional structure as shown inFIG. 8C, the semiconductor structure 86 and the electrode structure,which are formed by bonding to the support substrate 83, are providedwith the drain electrode 37 on one principal plane of the semiconductorstructure 86 and with the gate electrode 36 and source electrode 35 onthe other principal plane, so as to be secured to the support substrate83 through the bonding layer 85 on the formation side of the drainelectrode 37 and to be electrically connected to the drain electrode.This structure preferably enables the drain electrode 37 to be extractedfrom the side of conductive support substrate 83, so that the gateelectrode and the drain electrode can be in a spaced-apart, opposingstructure, i.e., in a vertical FET structure. Here, for a conductivesupport substrate, a semiconductor substrate such as Si, GaAs, and GaNcan be employed in addition to Cu—W. In the case of a semiconductorsubstrate, an electrode is provided on the back surface of the supportsubstrate. Also when an insulating substrate such as a sapphiresubstrate, etc. is employed, the drain electrode can be extracted fromthe side of the support substrate by partially removing the supportsubstrate and allowing the drain electrode to be exposed. Although thestructure is employed for securing the drain electrode formation side tothe support substrate, in FIG. 8, it goes without saying that astructural variant may also be employed for securing the gate and sourceelectrode formation side to the support substrate.

(Packaging)

After the completion of the above device steps, the chip is mounted intoa package. Here, when wire lines are provided, a wire bonder is used. Byvirtue of the wire bonding, heat can be dissipated from the electrodethrough the wire lines, and also an inductance component can be adjustedby varying the length of wire lines, so that the operation can beharmonized in a preferred manner. In the case of wireless bonding, onthe other hand, another thermally conductive substrate can be providedon the gate electrode and the source electrode, so that the heatdissipation characteristics can be improved. Also, a pad for wirebonding can be dispensed with, which will be suitable forminiaturization of the device. In addition, advantages can be enjoyed inthat the inductance component resulting from the wires and thecapacitance component between the wires or between the wires and themain body of the semiconductor device are reduced.

Also, without being limited to the present embodiments, when the carriersupply layer (typically, an n-type AlGaN) of the HEMT is prepared to beas thin as less than 2.5 nm, an arrival of electron can be expedited foran increased aspect ratio, a controlled short channel effect, and acontrolled leakage current, which are of a structure that is moresuitable for a high-speed operation.

INDUSTRIAL APPLICABILITY

The field effect transistor and the method of manufacturing the same inaccordance with the present invention can be utilized for HEMTs withhigh electron mobility in the carrier transit layer, being also suitablyutilized as a power device and a high frequency drive device for alow-loss power conversion device, a drive device for electric cars andhome-use inverters, etc.

It should be apparent to those with an ordinary skill in the art thatwhile various preferred embodiments of the invention have been shown anddescribed, it is contemplated that the invention is not limited to theparticular embodiments disclosed, which are deemed to be merelyillustrative of the inventive concepts and should not be interpreted aslimiting the scope of the invention, and which are suitable for allmodifications and changes falling within the spirit and scope of theinvention as defined in the appended claims. This application is basedon Application No. 2005-88909 filed in Japan on Mar. 25, 2005, thecontent of which is incorporated hereinto by reference.

1. A field effect transistor comprising: a semiconductor structurecontaining a carrier transit layer, the semiconductor structure beingmade of a Group III-V compound semiconductor layer; a gate electrode anda source electrode disposed respectively on or above the semiconductorstructure; and a drain electrode disposed on opposing side of thesemiconductor structure where the gate electrode is disposed.
 2. Thefield effect transistor as recited in claim 1, wherein the carriertransit layer contained in the semiconductor structure has an endsurface exposed on a side where the source electrode is disposed, andthe source electrode is disposed to make an ohmic contact with the endsurface.
 3. The field effect transistor as recited in claim 1, whereinthe field effect transistor is a high electron mobility transistor. 4.The field effect transistor as recited in claim 1, wherein the gateelectrode is annularly disposed so as to surround an area where thesource electrode is disposed, and wherein the drain electrode isannularly disposed so as to surround an area on opposing side of thesemiconductor structure where the gate electrode is disposed.
 5. Thefield effect transistor as recited in claim 1, wherein, the gateelectrode is annularly disposed so as to surround an area on opposingside of the semiconductor structure where the drain electrode isdisposed, and wherein the source electrode is annularly formed so as tosurround an area where the gate electrode is disposed.
 6. The fieldeffect transistor as recited in claim 1, wherein the semiconductorstructure contains a first semiconductor layer and a secondsemiconductor layer having a band gap energy greater than that of thefirst semiconductor layer, wherein the gate electrode and the sourceelectrode are disposed respectively on a side of the first semiconductorlayer, and wherein the drain electrode is disposed on a side of thesecond semiconductor layer.
 7. The field effect transistor as recited inclaim 6, wherein the second semiconductor layer has an AlGaN layer. 8.The field effect transistor as recited in claim 6, wherein the secondsemiconductor layer has an undoped AlGaN layer and a Si-doped AlGaNlayer.
 9. The field effect transistor as recited in claim 6, wherein thecarrier transit layer contained in the semiconductor structure has anend surface exposed on a side where the source electrode is disposed,and the source electrode is disposed to make an ohmic contact with theend surface.
 10. The field effect transistor as recited in claim 9,wherein the first semiconductor layer is the carrier transit layer, andthe second semiconductor layer is a carrier supply layer.
 11. The fieldeffect transistor as recited in claim 6, wherein the secondsemiconductor layer and the drain electrode has an intermediate layerdisposed therebetween.
 12. The field effect transistor as recited inclaim 11, wherein the second semiconductor layer has an AlGaN layer, andwherein the intermediate layer is made of GaN.
 13. The field effecttransistor as recited in claim 6, wherein the first semiconductor layeris the carrier transit layer, and the second semiconductor layer is acarrier supply layer.
 14. A field effect transistor comprising: asemiconductor structure containing a first semiconductor layer and asecond semiconductor layer, the second semiconductor layer having a bandgap energy greater than that of the first semiconductor layer, the firstand second semiconductor layers being made of a gallium nitride-basedcompound semiconductor layer; a gate electrode and a source electrodedisposed respectively on the first semiconductor layer side of thesemiconductor structure; and a drain electrode disposed on the secondsemiconductor layer side and opposed to a side of the semiconductorstructure where the source electrode is disposed.
 15. The field effecttransistor as recited in claim 14, wherein the second semiconductorlayer has an AlGaN layer.
 16. The field effect transistor as recited inclaim 15, wherein the second semiconductor layer has an undoped AlGaNlayer and a Si-doped AlGaN layer.
 17. The field effect transistor asrecited in claim 16, wherein the semiconductor structure has a carriertransit layer having an end surface exposed on a side where the sourceelectrode is disposed, and the source electrode is disposed to make anohmic contact with the end surface.
 18. The field effect transistor asrecited in claim 17, wherein the second semiconductor layer and thedrain electrode has an intermediate layer disposed therebetween.
 19. Thefield effect transistor as recited in claim 18, wherein the intermediatelayer is made of GaN.
 20. The field effect transistor as recited inclaim 19, wherein the first semiconductor layer is the carrier transitlayer, and the second semiconductor layer is a carrier supply layer.